Basic Information / Capabilities

The CS730S is a magnetron sputter system that is used for depositions of layers or multilayers on substrates of up to 150mm in diameter and 3mm in thickness. Sputtering is performed with a RF (radio frequency) or a DC (direct current) induced plasma of various gases. In this equipment O2, N2 and Ar are used.

The CS730S is equipped with two process chambers (PC), one load chamber (LC) and one transfer chamber (TC). All chambers are pumped with turbo molecular pumps for low pressure operation. Both process chambers, PC1 and PC2, are configured to have four targets.

Technical Specification

Targets that are available for sputtering are as follows: Al, Si, Ni, Ti, Mo, W and Zr, and alternatively Cu or Ag.

Process Specification

PC 1 (right process chamber) is dedicated to non-reactive deposition only.
PC 2 (left process chamber) is used for both reactive sputtering of materials such as aluminium nitride or titanium nitride and non-reactive deposition. PC 2 is also equipped with a substrate heater and a generator for substrate bias.

Standard recipes are available to sputter these materials.

Use of any new material, for which a target is not available from MSL, must be discussed with and approved by MSL.

Restrictions

•  Wafer / sample size: max  150mm in diameter and 3mm in thickness

•  Only high vacuum compatible substrates are allowed