Technical description
Full equipment name: Advanced Vacuum Vision 320 Reactive Ion Etcher (RIE)
General purpose:
• Dry etching of silicon oxide (SiO2)
• Dry etching of silicon nitride (Si3N4)

Technical data and restrictions:
• RIE tool with a large, spacious substrate table
• Supports a wide range of sample sizes, including chips, 100 mm (4") wafers, and 150 mm (6") wafers

• Process capabilities:

• Multiple available process recipes for silicon oxide and silicon nitride etching

• Example etch rates (thermally grown SiO2):

  • Recipe 1: 45 nm/min

  • Recipe 2: 70 nm/min

• Etch rate for LPCVD Si3N4:

  • Recipe 4: 60 nm/min

• Process gases:

• CHF3 (line: GC45C)

• O2 (line: GA051)

• Ar (line: GA021)

• Utilities:

• Venting: N2

• Pneumatics: Compressed air