Technical description
Full equipment name: PlasmaTherm SLR ICP Etcher
General purpose:
• Deep reactive ion etching (DRIE) of silicon using Bosch process in right chamber
• Dry etching of aluminum and other metals in left chamber using chlorine-based chemistry

Technical data and restrictions:
• One loadlock system, one transfer chamber, and two ICP processing chambers (left and right)
• Standard wafer size: 100 mm (4"). Wafer clamping can be reconfigured for 150 mm (6") if needed.

• Wafer handling:

• Do not use glued wafer stacks. Non-flat surfaces may damage the clamp.

• Do not attach chips arbitrarily on a carrier wafer. Risk of movement can damage the clamp.

• Use approved carrier wafers with etched recesses and secure mounting for chip-level processing (only after training and approval).

• Right chamber:

• ICP chamber configured for DRIE of silicon

• Primarily used for high-aspect ratio etching using the Bosch process

• Typical etch rate: ~1 µm/min (varies by feature size and open area)

• Selectivity (approx.):

  • 80:1 to photoresist

  • 200:1 to silicon oxide

  • Very high selectivity to aluminum masks (suitable for through-wafer etching)

• Process gases: SF6, C4F8, He, O2

• Left chamber:

• ICP chamber configured for metal etching

• Standard use: aluminum etching with chlorine-based chemistry

• Other metals or compounds may be etched only after consultation with MSL

• Process gases: Cl2, BCl3, O2, Ar