This tool is a part of UHV PVD system sharing a common sample loading, transfer, storage chambers and dedicated for reactive DC, pulsed DC or RF sputtering of oxides and nitrides.
Main technical parameters:
-Base pressure > 10-10 mbar (after breakout)
-Process gas - (Ar, O2, N2, H2)
-3 magnetrons (max power RF 300 W and up to 1 kW for pulsed DC) with the possibility to change the geometry
-Target size 2”, thickness 1-3 mm for magnetic targets and 1-6 mm for nonmagnetic)
-Substrate size up to 2”
-RF bias (max 300 W)
-Substrate temperature (20 - 1000oC)
-Quartz crystal microbalance
-Residual gas analyzer