Basic Information / Capabilities

The JEOL JBX-8100FS is a state-of-the art Electron Beam Lithography (EBL) system operating in high-throughput or high-precision modes for applications in nanofabrication of semiconductor device development

Technical Specification

• Electron source (ZrO/W thermal field emitter)
• Accelerating voltages: 100 kV(standard) or 50 kV(optional)
• Current range 0.5 nA to 150 nA, minimum spot size 4 nm
• Scan speed: up to 125 MHz
• Writing method: gausian beam, vector scan, step and repeat
• Main field size: 100 um (high resolution mode), 1 mm (high throughput mode)
• Field stiching accuracy: 9 nm (high resolution mode), 20 nm (high throughput mode)
• Laser controlled stage, maximum travel range 190 mm x 170 mm, resolution 0,6 nm
• Dynamic focus and stigmation control across scan fields
• Automated mark detection, overlay accuracy <10 nm (high resolution mode), <20 nm (high throughput mode)
• Substrate sizes from 5x5 mm to 50-50 mm, 4, 6 inch wafers, 5 inch mask plates

Performance

JEOL JobMaker and BEAMER software licensed by Genisys Gm available for for job file preparation, including proximity correction.

Restrictions

        • Chips / small pieces of non-standard size require special holder and mounting, contact MyFab stuff for details.

        • Non-standard photoresists or processes require approval from MyFab staff.

Chemistry / Materials

Standard resists provided by MyFab:

         • PMMA A4

         • CESAR (AR-P 6200.09)

         • UV5-0.8

         • SHQ 2%