Separate tool owner - Restricted access - Contact tool responsible
Possible to control film thickness at sub-nm level.
Up to 10 precursor sources available. Options for plasma and ozone processing. Substrate temperature up to 500 °C.
System is used for deposition of Al2O3, TiO2, Ta2O5 and some nitrides.
Polymers and photoresist allowed only for deposition at low temperatures (<100 °C).