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Current status:
AVAILABLE
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Possible to control film thickness at sub-nm level.

Up to 10 precursor sources available. Options for plasma and ozone processing. Substrate temperature up to 500 °C.

System is used for deposition of Al2O3, TiO2, Ta2O5 and some nitrides.

Polymers and photoresist allowed only for deposition at low temperatures (<100 °C).

Tool name:
ALD
Area/room:
3R72 - FTE Thin Film
Category:
Thin film deposition
Manufacturer:
Picosun
Model:
R200
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

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