Technical description
Full equipment name: Tegal 110 S/DE Deep Reactive Ion Etcher (DRIE)
General purpose:
• Deep reactive ion etching of silicon
• Dry etching of silicon oxide

Technical data and restrictions:
• DRIE tool configured for high-aspect ratio and deep etching applications
• Standard wafer size: 100 mm (4"). Wafer clamping can be reconfigured for 150 mm (6")

• Process capabilities:

• Multiple process recipes for silicon etching

  • Etch rates range from 2 µm/min to 15 µm/min

  • Available recipes:

    • High Aspect Ratio (HAR)  2 µm/min

    • High Etch Rate (HER) 15 µm/min

• Selectivity:

• Silicon etching:

  • ~80:1 to photoresist

  • ~200:1 to silicon oxide

  • Aluminum masks offer high selectivity but may lead to “grass” formation due to sputtering/redeposition. If Al is used as mask, only HER can mitigate the redeposition problem.

• Process gases:

• SF6, C4F8, O2, He

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Description before 2025-04-14 Tegal 110 S/DE

The Tegal 110 S/DE is a Deep Reactive Ion Etching tool (DRIE). It is primarily intended for etching deep features in silicon and silicon oxide. The tool will normally be set up for 100 mm (4") wafers. It is possible to change the wafer clamping to 150 mm (6").

We have several process recipes for silicon etching with etch rates ranging from 2 µm/min. to 20 µm/min. Besides a standard general recipe we have recipes for High Aspect Ratio Process (HAR), Super High Aspect Ratio Process (SHARP), and High Etch Rate Process (HER).

Typical selectivities for silicon etching are 80 for photo resist and 200 for silicon oxide. An aluminum mask has a very high selectivity but may cause problems with grass formation due to sputtering and redeposition of aluminum.

For silicon oxide etching the etch rate is 0.3 µm/min.

Selectivity for silicon oxide etching is 4.5 for photo resist.