Picture of Wet Bench Etch and strip
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Stangl etch and strip bench

 

Tool name:
Wet Bench Etch and strip
Area/room:
3R79 Wet chemistry
Category:
Wet process & preparation
Manufacturer:
Stangl
Model:
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Max booking time, day:
3 hours
Max booking time, night:
4 hours
No. of future bookings:
4

Silicon nitride etching

H3PO4 (85 wt.-%) at 165°C etched Si3N4 at 8 nm/min 2008-09-17. Örjan Vallin

 

Silicon dioxide strip

HF:H2O 1:4 at room temperature etches thermally grown SiO2 at approximately 0.6 µm/min. Rule of thumb.

 

Acid baths

Due to the material of the baths, stong acids have to be diluted.

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