Stangl etch and strip bench
Silicon nitride etching
H3PO4 (85 wt.-%) at 165°C etched Si3N4 at 8 nm/min 2008-09-17. Örjan Vallin
Silicon dioxide strip
HF:H2O 1:4 at room temperature etches thermally grown SiO2 at approximately 0.6 µm/min. Rule of thumb.
Due to the material of the baths, stong acids have to be diluted.