Basic Information / Capabilities

This Advanced Vacuum Vision 320 Reactive Ion Etcher (RIE) is a parallel-plate dry etching system primarily used for etching dielectric films, specifically silicon oxide (SiO2) and silicon nitride (Si3N4). The tool features a large substrate table, enabling flexible handling of chips and wafers up to 150 mm, and supports multiple standard recipes for oxide and nitride etching.

Technical Specification

Process Specification

SiO2 etch (std proc) (thermally grown SiO2, example recipes)

Etch rate (example):
• Recipe 1: ~45 nm/min
• Recipe 2: ~70 nm/min

Nonuniformity:
Selectivity:

Si3N4 etch (std proc) (LPCVD Si3N4, example recipe)

Etch rate (example):
• Recipe 4: ~60 nm/min

Nonuniformity:
Selectivity:

Restrictions

• Wafer / sample size: chips / 100 mm standard / 150 mm supported.

• Non-standard processing (materials outside standard SiO2/Si3N4 workflows, or atypical stacks) must be approved by lab staff.

• Chips / small pieces require appropriate mounting and handling (approval may be required depending on carrier/mounting approach).

Chemistry / Materials

Process gas (current configuration):
• CHF3 (line: GC45C)
• O2 (line: GA051)
• Ar (line: GA021)

Utilities

• Venting: N2
• Pneumatics: Compressed air