Basic Information / Capabilities

This PlasmaTherm SLR ICP etcher has one load-lock, one transfer chamber and two ICP processing chambers for dry etching of aluminum and other metals using chlorine-based chemistry (left chamber) and deep reactive ion etching (DRIE) of silicon using the Bosch process (right chamber).

Technical Specification

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Process Specification

Left chamber – Al etch (std proc)

Etch rate:
Nonuniformity:
Selectivity:

Right chamber – Si DRIE (std proc)

Etch rate:   ~1 µm/min (depending on feature size and open area)
Nonuniformity:
Selectivity (approx):   80:1 (photoresist) / 200:1 (SiO2)

Aluminum mask suitable for through-wafer etching (very high selectivity to Al).

Restrictions

•  Wafer / sample size: 100 mm standard / 150 mm w reconfiguration / smaller pieces w permission.

•  Glued wafer stacks and non-flat wafers are not allowed.

•  Chips / small pieces require special treatment and approval from lab staff.

•  Etching of other materials (non-standard processing) must be approved by lab staff.

Chemistry / Materials

Process gas

Left chamber:   Cl2, BCl3, O2, Ar
Right chamber:   SF6, C4F8, He, O2