PT24B - UHV-OXY
Basic Information / Capabilities
This tool is a part of UHV PVD system sharing a common sample loading, transfer, storage chambers and dedicated for reactive DC, pulsed DC or RF sputtering of oxides and nitrides. The chamber is equipped with three magnetrons allowing for deposition of thin films/multilayered structures and mixed films.
Technical Specification
-Base pressure > 10-10 mbar (after breakout)
-Process gas - (Ar, O2, N2, H2)
-3 magnetrons (max power RF 300 W and up to 1 kW for pulsed DC) with the possibility to change the geometry
-Target size 2”, thickness 1-3 mm for magnetic targets and 1-6 mm for nonmagnetic)
-Substrate size up to 2”
-RF bias (max 300 W)
-Substrate temperature (20 - 1000oC)
-Quartz crystal microbalance
-Residual gas analyzer
Restrictions
Only UHV compatible substrates are allowed.