FHR-sputter

Basic Information / Capabilities
The MS 100x6-S2-AE sputtering system from FHR is a magnetron sputter system that is used for depositions of layers or multilayers on substrates of up to 150mm in diameter and 5mm in thickness. 

Sputtering is performed with a RF (radio frequency) or a DC (direct current) induced plasma of various gases. In this equipment O2, N2, H2 and Ar are used.
The FHR-sputter is equipped with two sputter process chambers, one etching chamber, one load chamber and one transfer chamber. All chambers are pumped with turbo molecular pumps enabling a low base pressure (-7 Torr). The sputter process chambers are configured to have six and four targets.

Technical Specification
Targets that are available for sputtering are as follows: Ti, Ni, Cr, Ti/W, Mo, Y and Si.
Process Specification
K3 (right sputter chamber) is dedicated to non-reactive deposition only.
K3 (left sputter chamber) is used for reactive sputtering of materials such as silicon oxide and yttrium hydride as well as non-reactive materials.

Standard recipes are available to sputter the target material.
Use of any new material, for which a target is not available from MSL, must be discussed with and approved by MSL.

Restrictions
•  Wafer / sample size: max  150mm in diameter and 5mm in thickness
•  Only high vacuum compatible substrates are allowed