Picture of TCO sputter
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AVAILABLE
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Basic Information / Capabilities

Magnetron sputtering deposition system CS730S (Von Ardenne) dedicated to transparent conducting oxides. Sputtering is performed with a RF (radio frequency) or a DC (direct current) in an Ar atmosphere with addition of O2. 
 
The machine consists of a process chambers (PC1) equipped with three magnetron sources, one load chamber (LC) and one transfer chamber (TC).
 
Process Specification
ITO, ZnO and ZnO:Al targets installed.

Automatic processes for ITO, AZO, and ZnO are available. Up to 4 wafers can be deposited in a single batch. See process details for recommended deposition conditions.

 

Restrictions and Substrates:

  • Substrate carriers for substrates up to 150 mm in diameter, max. 3 mm thick.
  • Heating of the substrates occurs during the deposition. Consult the use of temperature sensitive substrates with the tool responsible.
Tool name:
TCO sputter
Area/room:
3R44 - ets / tunnfilm
Category:
Thin film deposition
Manufacturer:
von Ardenne
Model:
CS730

ITO

ITO.tec Start by pressing ITO button.

2025-11-12:  0.4 sccm O2 recommended for best sheet resistance. Gives about 180nm in 120s, sheet resistance about 40 Ohm/sq.

 

AZO

AZO.tec  Start by pressing AZO button

Recommended conditions: XX sccm O2, 600s gives about 200nm and YY Ohm/sq. After changing the MFC, the O2 flow needs to be optimized.

Conditioning may be necessary after a longer time when the process was not in use. 2x10 min seems to be enough, there is a program AZO_conditioning.tec that can be used (dummy deposition, no need to load substrates). 

 

ZnO

ZNO.tec  Start by pressing ZNO button

 

Wicon

Renaming a substrate, example A1 position in the transfer chamber

A1_2TC.NAME="A1"

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